Unbounded Solutions to Systems of Differential Equations at Resonance

Journal of Dynamics and Differential Equations - We deal with a weakly coupled system of ODEs of the type $$\begin{aligned} x_j'' + n_j^2 \,x_j + h_j(x_1,\ldots ,x_d) = p_j(t), \qquad...     

Semi-invariants of binary forms and Sylvester’s theorem

The Ramanujan Journal - We obtain a combinatorial formula related to the shear transformation for semi-invariants of binary forms, which implies the classical characterization of semi-invariants in...     

Separation,Preconcentration, and Determination of Lead,Cadmium, and Iron Using Cloud Point Extraction with Flame Atomic Absorption Spectrometry

Journal of Applied Spectroscopy - The concentration of heavy metals in drinking water is an important standard for water quality evaluation and water pipeline corrosion detection. This research...     

Synthesis and Cytotoxic Activity of 1,3,5-Triazinane Derivatives Based on Primary Amines and Amino Acids Esters

Russian Journal of General Chemistry - A series of 1,3,5-triazinane derivatives was synthesized and their cytotoxic activity was studied in vitro on normal cell line (HEK293) and tumor cell lines...     

Growth of $${\text{N}}{{{\text{d}}}_{{{\text{1}}\; - \;y}}}{\text{Eu}}_{y}^{{{\text{2}} + }}{{{\text{F}}}_{{{\text{3}}\; - \;y}}}$$ Single Crystals with Tysonite-Type (LaF3) Structure and Investigation of the Concentration Dependence of Some Their Properties

Crystallography Reports - Nd1 – yEuyF3 – y crystals (y is the molar fraction of EuF2; 0 ≤ y ≤ 0.15) with a tysonite (LaF3) structure have...     

Possibilities of X-Ray Absorption Spectroscopy in the Total External Reflection Geometry for Studying Protein Films on Liquids

Crystallography Reports - XANES spectra of protein films (hemoglobin and alkaline phosphatase) formed on the surface of a liquid subphase in a Langmuir trough have been obtained experimentally. The...     

Microgravimetric study of electrochemical properties of PEDOT/WO3 composite films in diluted sulfuric acid

Journal of Solid State Electrochemistry - Poly-3,4-ethylenedioxythiophene composite films with tungsten oxide (PEDOT/WO3) were obtained by potentiodynamic deposition of tungsten oxide from acidic...     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Sorption of Metal Ions by Chitosan Copolymers with Vinyl Monomers

Russian Journal of Applied Chemistry - Chitosan copolymers with vinyl monomers: 4-N-vinylpyridine, acrylamide, and acrylic acid, were synthesized and these sorption properties were investigated....     

Synthesis of γ-(Arylamino)butyric Acid Derivatives via Ring-Opening Addition of Arylamines to Cyclopropane-1,1-Dicarboxylates

Russian Journal of Organic Chemistry - A rapid and efficient catalytic approach has been proposed for the synthesis of dimethyl 2-[2-(aryl-amino)but-3-en-1-yl]- and...